PSMN015-100B

PSMN015-100B,118 vs PSMN015-100B vs PSMN015-100B+118

 
PartNumberPSMN015-100B,118PSMN015-100BPSMN015-100B+118
DescriptionMOSFET TAPE13 PWR-MOSTransistor: N-MOSFET, unipolar, 100V, 75A, 300W, D2PAKNow Nexperia PSMN015-100B - Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current75 A--
Rds On Drain Source Resistance15 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation300 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.5 mm--
Length10.3 mm--
Transistor Type1 N-Channel--
Width9.4 mm--
BrandNexperia--
Fall Time50 ns--
Product TypeMOSFET--
Rise Time65 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time95 ns--
Typical Turn On Delay Time25 ns--
Part # Aliases/T3 PSMN015-100B--
メーカー モデル 説明 RFQ
Nexperia
Nexperia
PSMN015-100B,118 MOSFET TAPE13 PWR-MOS
PSMN015-100B,118 IGBT Transistors MOSFET TAPE13 PWR-MOS
PSMN015-100B Transistor: N-MOSFET, unipolar, 100V, 75A, 300W, D2PAK
PSMN015-100B+118 Now Nexperia PSMN015-100B - Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK
PSMN015-100B118 Now Nexperia PSMN015-100B - Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK
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