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| PartNumber | PSMN057-200P,127 | PSMN057-200P | PSMN057-200P127 |
| Description | MOSFET TRENCH-200 | MOSFET TRENCH-200 | Now Nexperia PSMN057-200P - Power Field-Effect Transistor, 39A I(D), 200V, 0.057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIL3P |
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 39 A | - | - |
| Rds On Drain Source Resistance | 57 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 250 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 9.4 mm | - | - |
| Length | 10.3 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.7 mm | - | - |
| Brand | Nexperia | - | - |
| Fall Time | 78 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 58 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 105 ns | - | - |
| Typical Turn On Delay Time | 18 ns | - | - |
| Part # Aliases | PSMN057-200P | - | - |
| Unit Weight | 0.211644 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Nexperia |
PSMN057-200P,127 | MOSFET TRENCH-200 | |
| PSMN057-200P,127 | MOSFET N-CH 200V 39A TO220AB | ||
| PSMN057-200P | MOSFET TRENCH-200 | ||
| PSMN057-200P127 | Now Nexperia PSMN057-200P - Power Field-Effect Transistor, 39A I(D), 200V, 0.057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIL3P |