| PartNumber | PSMN1R0-40YLDX | PSMN1R0-40ULDX | PSMN1R0-40SSHJ |
| Description | MOSFET N-CH 40V 1.1 mOhm logic level MOSFET | MOSFET N-channel 40 V, 1.1 mO, 280 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPower-S3 Schottky-Plus technology | MOSFET PSMN1R0-40SSH/SOT1235/LFPAK88 |
| Manufacturer | Nexperia | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | LFPAK56-5 | LFPAK56E-4 | LFPAK88-4 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
| Id Continuous Drain Current | 280 A | 280 A | 325 A |
| Rds On Drain Source Resistance | 1.1 mOhms | 1.1 mOhms | 1 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.7 V | 1.05 V | 2.4 V |
| Vgs Gate Source Voltage | 10 V | 20 V | 20 V |
| Qg Gate Charge | 127 nC | 127 nC | 137 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 175 C |
| Pd Power Dissipation | 198 W | 164 W | 375 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Nexperia | Nexperia | Nexperia |
| Fall Time | 38 ns | 38 ns | 26 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 62 ns | 62 ns | 19 ns |
| Factory Pack Quantity | 1500 | 1500 | 2000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 65 ns | 65 ns | 59 ns |
| Typical Turn On Delay Time | 52 ns | 52 ns | 23 ns |
| Unit Weight | 0.003407 oz | - | - |
| Part # Aliases | - | - | 934660688118 |