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| PartNumber | PSMN1R1-30PL,127 | PSMN1R1-30PL | PSMN1R1-30PL127 |
| Description | MOSFET N-Ch 30V 1.3 mOhms | Now Nexperia PSMN1R1-30PL - Power Field-Effect Transistor, 120A I(D), 30V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | |
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 120 A | - | - |
| Rds On Drain Source Resistance | 1.3 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.3 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 243 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 338 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Nexperia | - | - |
| Fall Time | 115 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 213 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 199 ns | - | - |
| Typical Turn On Delay Time | 95 ns | - | - |
| Unit Weight | 0.211644 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Nexperia |
PSMN1R1-30PL,127 | MOSFET N-Ch 30V 1.3 mOhms | |
| PSMN1R1-30PL,127 | MOSFET N-CH 30V 120A TO220AB | ||
| PSMN1R1-30PL | ブランドニューオリジナル | ||
| PSMN1R1-30PL127 | Now Nexperia PSMN1R1-30PL - Power Field-Effect Transistor, 120A I(D), 30V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |