PSMN1R6-30P stock, PSMN1R6-30P, PSMN1R6-30PL

PSMN1R6-30PL vs PSMN1R6-30PL127 vs PSMN1R6-30PL,127


PartNumber	PSMN1R6-30PL	PSMN1R6-30PL127	PSMN1R6-30PL,127
Description	MOSFET,N CHANNEL,30V,100A,TO-220AB, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0014ohm, Rds(on) Test Voltage Vgs:10V,	Now Nexperia PSMN1R6-30PL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	Darlington Transistors MOSFET N-CH 30V 1.7 mOhm Logic Level MOSFET

Search Part Number : "PSMN1R6-30P", Match & Start with "PSMN1R6-30P" - Total : 3

メーカー	モデル	説明
	PSMN1R6-30PL	MOSFET,N CHANNEL,30V,100A,TO-220AB, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0014ohm, Rds(on) Test Voltage Vgs:10V,
	PSMN1R6-30PL127	Now Nexperia PSMN1R6-30PL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Nexperia	PSMN1R6-30PL,127	Darlington Transistors MOSFET N-CH 30V 1.7 mOhm Logic Level MOSFET