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| PartNumber | PSMN4R2-60PLQ | PSMN4R2-30MLDX |
| Description | MOSFET N-Channel MOSFET | MOSFET 30V N-Channel 2.4mOhm |
| Manufacturer | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | E |
| Technology | Si | Si |
| Mounting Style | Through Hole | SMD/SMT |
| Package / Case | TO-220-3 | LFPAK56-5 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 30 V |
| Id Continuous Drain Current | 130 A | 70 A |
| Rds On Drain Source Resistance | 8.6 mOhms | 5.7 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.45 V | 2.2 V |
| Qg Gate Charge | 151 nC | 29.3 nC |
| Pd Power Dissipation | 263 W | 65 W |
| Configuration | Single | Single |
| Packaging | Tube | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | Nexperia | Nexperia |
| Fall Time | 72 ns | 8.7 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 97 ns | 18.5 ns |
| Factory Pack Quantity | 50 | 1500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 84 ns | 12 ns |
| Typical Turn On Delay Time | 47 ns | 10.1 ns |
| Unit Weight | 0.211644 oz | 0.001810 oz |
| Vgs Gate Source Voltage | - | 2.2 V |
| Channel Mode | - | Enhancement |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Nexperia |
PSMN4R2-60PLQ | MOSFET N-Channel MOSFET | |
| PSMN4R2-30MLDX | MOSFET 30V N-Channel 2.4mOhm | ||
| PSMN4R2-60PLQ | IGBT Transistors MOSFET N-Channel MOSFET | ||
| PSMN4R2-30MLDX | IGBT Transistors MOSFET 30V N-Channel 2.4mOhm | ||
| PSMN4R2-30MLD | ブランドニューオリジナル | ||
| PSMN4R2-60PL | ブランドニューオリジナル | ||
| PSMN4R2-30MLD,115 | ブランドニューオリジナル |