 |  | |
| PartNumber | PSMN4R8-100BSEJ | PSMN4R8-100PSEQ |
| Description | MOSFET N-channel 100 V 4.8 mo FET | MOSFET N-channel 100 V 5 mO std level MOSFET |
| Manufacturer | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | E |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | Through Hole |
| Package / Case | TO-263-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | - |
| Id Continuous Drain Current | 120 A | - |
| Rds On Drain Source Resistance | 4.8 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - |
| Vgs Gate Source Voltage | 10 V | - |
| Qg Gate Charge | 196 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 175 C | - |
| Pd Power Dissipation | 405 W | - |
| Configuration | Single | Single |
| Channel Mode | Enhancement | - |
| Packaging | Reel | Tube |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | Nexperia | Nexperia |
| Fall Time | 69 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 65 ns | - |
| Factory Pack Quantity | 800 | 50 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 127 ns | - |
| Typical Turn On Delay Time | 41 ns | - |
| Unit Weight | 0.139332 oz | 0.063493 oz |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Nexperia |
PSMN4R8-100BSEJ | MOSFET N-channel 100 V 4.8 mo FET | |
| PSMN4R8-100PSEQ | MOSFET N-channel 100 V 5 mO std level MOSFET | ||
| PSMN4R8-100BSEJ | MOSFET N-CH 100V D2PAK | ||
| PSMN4R8-100PSEQ | MOSFET N-CH 100V TO220AB | ||
| PSMN4R8-100BSE | ブランドニューオリジナル | ||
| PSMN4R8-100BSE118 | ブランドニューオリジナル | ||
| PSMN4R8-100PSE | ブランドニューオリジナル | ||
| PSMN4R8-100BSEJ-CUT TAPE | ブランドニューオリジナル |