PSMN5R6-100P

PSMN5R6-100PS,127 vs PSMN5R6-100PS vs PSMN5R6-100PS+127

 
PartNumberPSMN5R6-100PS,127PSMN5R6-100PSPSMN5R6-100PS+127
DescriptionMOSFET MOSFET N-CH 100V 100AMOSFET Transistor, N Channel, 100 A, 100 V, 4.3 mohm, 10 V, 3 V RoHS Compliant: YesNow Nexperia PSMN5R6-100PS - Power Field-Effect Transistor, 100A I(D), 100V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance5.6 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation306 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height9.4 mm--
Length10.3 mm--
Transistor Type1 N-Channel--
Width4.7 mm--
BrandNexperia--
Fall Time34 ns--
Product TypeMOSFET--
Rise Time46 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time83 ns--
Typical Turn On Delay Time31 ns--
Unit Weight0.211644 oz--
メーカー モデル 説明 RFQ
Nexperia
Nexperia
PSMN5R6-100PS,127 MOSFET MOSFET N-CH 100V 100A
PSMN5R6-100PS,127 Darlington Transistors MOSFET MOSFET N-CH 100V 100A
PSMN5R6-100PS MOSFET Transistor, N Channel, 100 A, 100 V, 4.3 mohm, 10 V, 3 V RoHS Compliant: Yes
PSMN5R6-100PS+127 Now Nexperia PSMN5R6-100PS - Power Field-Effect Transistor, 100A I(D), 100V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
PSMN5R6-100PS127 Now Nexperia PSMN5R6-100PS - Power Field-Effect Transistor, 100A I(D), 100V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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