RGS8

RGS80TSX2DHRC11 vs RGS80TS65HRC11 vs RGS80TS65DHRC11

 
PartNumberRGS80TSX2DHRC11RGS80TS65HRC11RGS80TS65DHRC11
DescriptionIGBT Transistors 1200V 40A FIELD STOP TRENCHIGBT Transistors 650V 40A FIELD STOP TRENCHTrans IGBT Chip N-CH 650V 73A 3-Pin TO-247N (Alt: RGS80TS65DHRC11)
ManufacturerROHM SemiconductorROHM Semiconductor-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-247N-3TO-247N-3-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max1200 V650 V-
Collector Emitter Saturation Voltage1.7 V1.65 V-
Maximum Gate Emitter Voltage30 V30 V-
Pd Power Dissipation555 W272 W-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 175 C+ 175 C-
PackagingTubeTube-
BrandROHM SemiconductorROHM Semiconductor-
Gate Emitter Leakage Current500 nA200 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity3030-
SubcategoryIGBTsIGBTs-
Continuous Collector Current at 25 C-73 A-
メーカー モデル 説明 RFQ
RGS80TSX2HRC11 IGBT Transistors 1200V 40A FIELD STOP TRENCH
RGS80TSX2DHRC11 IGBT Transistors 1200V 40A FIELD STOP TRENCH
RGS80TS65HRC11 IGBT Transistors 650V 40A FIELD STOP TRENCH
RGS80TS65DHRC11 Trans IGBT Chip N-CH 650V 73A 3-Pin TO-247N (Alt: RGS80TS65DHRC11)
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