RGT40T

RGT40TM65DGC9 vs RGT40TS65D vs RGT40TS65DG

 
PartNumberRGT40TM65DGC9RGT40TS65DRGT40TS65DG
DescriptionIGBT Transistors FIELD STOP TRENCH IGBT
ManufacturerROHM SemiconductorRohm Semiconductor-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-220-3--
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingle--
Collector Emitter Voltage VCEO Max650 V--
Collector Emitter Saturation Voltage1.65 V1.65 V-
Maximum Gate Emitter Voltage30 V+/- 30 V-
Continuous Collector Current at 25 C17 A40 A-
Pd Power Dissipation39 W--
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 175 C+ 175 C-
PackagingTubeTube-
BrandROHM Semiconductor--
Gate Emitter Leakage Current200 nA+/- 200 nA-
Product TypeIGBT Transistors--
Factory Pack Quantity50--
SubcategoryIGBTs--
Part # AliasesRGT40TM65D--
Series-RGT40TS65D-
Unit Weight-1.340411 oz-
Package Case-TO-247-3-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-TO-247N-
Power Max-144W-
Reverse Recovery Time trr-58ns-
Current Collector Ic Max-40A-
Voltage Collector Emitter Breakdown Max-650V-
IGBT Type-Trench Field Stop-
Current Collector Pulsed Icm-60A-
Vce on Max Vge Ic-2.1V @ 15V, 20A-
Switching Energy---
Gate Charge-40nC-
Td on off 25°C-22ns/75ns-
Test Condition-400V, 20A, 10 Ohm, 15V-
Pd Power Dissipation-144 W-
Collector Emitter Voltage VCEO Max-650 V-
Continuous Collector Current Ic Max-40 A-
メーカー モデル 説明 RFQ
RGT40TM65DGC9 IGBT Transistors FIELD STOP TRENCH IGBT
RGT40TS65DGC11 IGBT Transistors 650V 20A IGBT Stop Trench
RGT40TS65DGC11 IGBT Transistors 650V 20A Field Stop Trench IGBT
RGT40TS65D ブランドニューオリジナル
RGT40TS65DG ブランドニューオリジナル
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