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| PartNumber | RGT80TS65DGC11 | RGT80TS65D | RGT80TS65DGC11/TO247NNP |
| Description | IGBT Transistors 650V 40A IGBT Stop Trench | ||
| Manufacturer | ROHM Semiconductor | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-247-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Collector Emitter Voltage VCEO Max | 650 V | - | - |
| Collector Emitter Saturation Voltage | 1.65 V | - | - |
| Maximum Gate Emitter Voltage | 30 V | - | - |
| Continuous Collector Current at 25 C | 70 A | - | - |
| Pd Power Dissipation | 234 W | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Series | RGT80TS65D | - | - |
| Packaging | Tube | - | - |
| Continuous Collector Current Ic Max | 70 A | - | - |
| Operating Temperature Range | - 40 C to + 175 C | - | - |
| Brand | ROHM Semiconductor | - | - |
| Continuous Collector Current | 40 A | - | - |
| Gate Emitter Leakage Current | +/- 200 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 450 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | RGT80TS65D | - | - |
| Unit Weight | 1.340411 oz | - | - |