RN1101(T

RN1101(T5L,F,T) vs RN1101(T5LFT vs RN1101(T5LFT)

 
PartNumberRN1101(T5L,F,T)RN1101(T5LFTRN1101(T5LFT)
DescriptionBipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
ManufacturerToshiba--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationSingle--
Transistor PolarityNPN--
Typical Input Resistor4.7 kOhms--
Typical Resistor Ratio1--
Mounting StyleSMD/SMT--
Package / CaseSOT-416-3--
DC Collector/Base Gain hfe Min30--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA--
Pd Power Dissipation100 mW--
SeriesRN1101--
PackagingReel--
Emitter Base Voltage VEBO10 V--
BrandToshiba--
Maximum DC Collector Current100 mA--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000212 oz--
メーカー モデル 説明 RFQ
Toshiba
Toshiba
RN1101(T5L,F,T) Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
RN1101(T5L,F,T) Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
RN1101(T5LFT ブランドニューオリジナル
RN1101(T5LFT) ブランドニューオリジナル
RN1101(TE85L) ブランドニューオリジナル
RN1101(TE85LF) ブランドニューオリジナル
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