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| PartNumber | RN1101MFV,L3F | RN1101MFV(TPL3) | RN1101MFV |
| Description | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 4.7Kohms | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 4.7Kohms | |
| Manufacturer | Toshiba | Toshiba | TOSHIBA |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Transistors (BJT) - Single, Pre-Biased |
| RoHS | Y | Y | - |
| Transistor Polarity | NPN | NPN | - |
| Typical Input Resistor | 4.7 kOhms | 4.7 kOhms | - |
| Typical Resistor Ratio | 1 | 1 | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | VESM-3 | - | - |
| DC Collector/Base Gain hfe Min | 30 | 30 | - |
| Collector Emitter Voltage VCEO Max | 50 V | 50 V | - |
| Continuous Collector Current | 100 mA | 100 mA | - |
| Pd Power Dissipation | 150 mW | 150 mW | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | RN1101 | RN1101 | - |
| Packaging | Reel | Reel | - |
| Collector Base Voltage VCBO | 50 V | - | - |
| Emitter Base Voltage VEBO | 10 V | - | - |
| Height | 0.5 mm | - | - |
| Length | 1.2 mm | - | - |
| Operating Temperature Range | - 55 C to + 150 C | - | - |
| Type | NPN Epitaxial Silicon Transistor | - | - |
| Width | 0.8 mm | - | - |
| Brand | Toshiba | Toshiba | - |
| Number of Channels | 1 Channel | - | - |
| Channel Mode | Enhancement | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | - |
| Factory Pack Quantity | 8000 | 8000 | - |
| Subcategory | Transistors | Transistors | - |
| Configuration | - | Single | - |
| Peak DC Collector Current | - | 100 mA | - |
| DC Current Gain hFE Max | - | 30 | - |