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| PartNumber | RN1103MFV,L3F | RN1103MFV(TPL3) |
| Description | Bipolar Transistors - BJT Bias Resistor with Built-in Transistor | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 22K x 22Kohms |
| Manufacturer | Toshiba | Toshiba |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - Pre-Biased |
| RoHS | Y | Y |
| Technology | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-723-3 | - |
| Transistor Polarity | NPN | NPN |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 50 V | 50 V |
| Collector Base Voltage VCBO | 50 V | - |
| Emitter Base Voltage VEBO | 10 V | - |
| Collector Emitter Saturation Voltage | 100 mV | - |
| Maximum DC Collector Current | 100 mA | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Series | RN1103 | RN1103 |
| Packaging | Reel | Reel |
| Brand | Toshiba | Toshiba |
| DC Collector/Base Gain hfe Min | 70 | 70 |
| Pd Power Dissipation | 150 mW | 150 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors - Pre-Biased |
| Factory Pack Quantity | 8000 | 8000 |
| Subcategory | Transistors | Transistors |
| Typical Input Resistor | - | 22 kOhms |
| Typical Resistor Ratio | - | 1 |
| Continuous Collector Current | - | 100 mA |
| Peak DC Collector Current | - | 100 mA |
| DC Current Gain hFE Max | - | 70 |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Toshiba |
RN1103MFV,L3F | Bipolar Transistors - BJT Bias Resistor with Built-in Transistor | |
| RN1103MFV(TPL3) | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 22K x 22Kohms | ||
| RN1103MFV(TPL3) | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 22K x 22Kohms | ||
| RN1103MFV,L3F | TRANS PREBIAS NPN 150MW VESM | ||
| RN1103MFV(TPL3)-ND | ブランドニューオリジナル | ||
| RN1103MFVL3FCT-ND | ブランドニューオリジナル | ||
| RN1103MFVL3FDKR-ND | ブランドニューオリジナル | ||
| RN1103MFVL3FTR-ND | ブランドニューオリジナル | ||
| RN1103MFV-TPL3 | ブランドニューオリジナル | ||
| RN1103MFV | ブランドニューオリジナル |