 |  | | |
| PartNumber | RN1107(T5L,F,T) | RN1107(TE85L) | RN1107(TE85L,F) |
| Description | Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO | Trans Digital BJT NPN 50V 100mA 3-Pin SSM T/R | |
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - Pre-Biased | - | - |
| RoHS | Y | - | - |
| Configuration | Single | - | - |
| Transistor Polarity | NPN | - | - |
| Typical Input Resistor | 10 kOhms | - | - |
| Typical Resistor Ratio | 0.213 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-416-3 | - | - |
| DC Collector/Base Gain hfe Min | 80 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 100 mW | - | - |
| Series | RN1107 | - | - |
| Packaging | Reel | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Brand | Toshiba | - | - |
| Maximum DC Collector Current | 100 mA | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000212 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Toshiba |
RN1107(T5L,F,T) | Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO | |
| RN1107(T5L,F,T) | Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO | ||
| RN1107(TE85L) | ブランドニューオリジナル | ||
| RN1107(TE85L,F) | Trans Digital BJT NPN 50V 100mA 3-Pin SSM T/R |