RN1114M

RN1114MFV,L3F vs RN1114MFV(TPL3) vs RN1114MFV

 
PartNumberRN1114MFV,L3FRN1114MFV(TPL3)RN1114MFV
DescriptionBipolar Transistors - Pre-Biased Bias Resistor Built-in TransistorBipolar Transistors - Pre-Biased 50volts 100mA 3Pin 1.0Kohms x 10Kohms
ManufacturerToshibaToshiba-
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-Biased-
RoHSYN-
ConfigurationSingle--
Transistor PolarityNPNNPN-
Typical Input Resistor1 kOhms, 10 kOhms1 kOhms-
Typical Resistor Ratio0.10.1-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-723-3--
DC Collector/Base Gain hfe Min5050-
Maximum Operating Frequency250 MHz--
Collector Emitter Voltage VCEO Max50 V50 V-
Continuous Collector Current100 mA100 mA-
Pd Power Dissipation150 mW150 mW-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesRN1114MFVRN1114MFV-
PackagingReelReel-
Emitter Base Voltage VEBO5 V5 V-
BrandToshibaToshiba-
Number of Channels1 Channel--
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased-
Factory Pack Quantity80008000-
SubcategoryTransistorsTransistors-
Minimum Operating Temperature-- 65 C-
Collector Base Voltage VCBO-50 V-
Height-1.2 mm-
Length-1.2 mm-
Operating Temperature Range-- 65 C to + 150 C-
Type-NPN Epitaxial Silicon Transistor-
Width-0.5 mm-
メーカー モデル 説明 RFQ
Toshiba
Toshiba
RN1114MFV,L3F Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor
RN1114MFV(TPL3) Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 1.0Kohms x 10Kohms
RN1114MFV(TPL3) Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 1.0Kohms x 10Kohms
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