 | | | |
| PartNumber | RN1119MFV(TPL3) | RN1119MFV | RN1119MFV TL3T |
| Description | Bipolar Transistors - Pre-Biased Bias Resistor | ||
| Manufacturer | Toshiba | - | |
| Product Category | Bipolar Transistors - Pre-Biased | Transistors (BJT) - Single, Pre-Biased | - |
| RoHS | N | - | - |
| Configuration | Single | - | - |
| Transistor Polarity | NPN | - | - |
| Typical Input Resistor | 1 kOhms | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-723 | - | - |
| DC Collector/Base Gain hfe Min | 120 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 100 mA | - | - |
| Peak DC Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 150 mW | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | RN1119MFV | - | - |
| Packaging | Reel | - | - |
| Collector Base Voltage VCBO | 50 V | - | - |
| DC Current Gain hFE Max | 700 | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Height | 0.5 mm | - | - |
| Length | 1.2 mm | - | - |
| Operating Temperature Range | - 65 C to + 150 C | - | - |
| Type | NPN Epitaxial Silicon Transistor | - | - |
| Width | 0.8 mm | - | - |
| Brand | Toshiba | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 8000 | - | - |
| Subcategory | Transistors | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Toshiba |
RN1119MFV,L3F | Bipolar Transistors - Pre-Biased Bias Resistor NPN .1A 50V 1kohm | |
| RN1119MFV,L37F | Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor | ||
| RN1119MFV(TPL3) | Bipolar Transistors - Pre-Biased Bias Resistor | ||
| RN1119MFV(TPL3) | Bipolar Transistors - Pre-Biased Bias Resisto | ||
| RN1119MFV | ブランドニューオリジナル | ||
| RN1119MFV TL3T | ブランドニューオリジナル | ||
| RN1119MFVL3F-ND | ブランドニューオリジナル |