 | | | |
| PartNumber | RN2906FE | RN2906FE(TE85LF)CT-ND | RN2906FE(TE85LF)DKR-ND |
| Description | |||
| Manufacturer | Toshiba Semiconductor and Storage | - | - |
| Product Category | Transistors (BJT) - Arrays, Pre-Biased | - | - |
| Series | - | - | - |
| Packaging | Digi-ReelR Alternate Packaging | - | - |
| Package Case | SOT-563, SOT-666 | - | - |
| Mounting Type | Surface Mount | - | - |
| Supplier Device Package | ES6 | - | - |
| Power Max | 100mW | - | - |
| Transistor Type | 2 PNP - Pre-Biased (Dual) | - | - |
| Current Collector Ic Max | 100mA | - | - |
| Voltage Collector Emitter Breakdown Max | 50V | - | - |
| Resistor Base R1 Ohms | 4.7k | - | - |
| Resistor Emitter Base R2 Ohms | 47k | - | - |
| DC Current Gain hFE Min Ic Vce | 80 @ 10mA, 5V | - | - |
| Vce Saturation Max Ib Ic | 300mV @ 250μA, 5mA | - | - |
| Current Collector Cutoff Max | 100nA (ICBO) | - | - |
| Frequency Transition | 200MHz | - | - |