 | | | |
| PartNumber | SGP10N60RUF | SGP10N60RUFD | SGP10N60RUFD,SGP10N60RUF |
| Description | |||
| Manufacturer | - | Fairchild Semiconductor | - |
| Product Category | - | IGBTs - Single | - |
| Series | - | - | - |
| Packaging | - | Tube | - |
| Part Aliases | - | SGP10N60RUFDTU_NL | - |
| Unit Weight | - | 0.063493 oz | - |
| Mounting Style | - | Through Hole | - |
| Package Case | - | TO-220-3 | - |
| Input Type | - | Standard | - |
| Mounting Type | - | Through Hole | - |
| Supplier Device Package | - | TO-220-3 | - |
| Configuration | - | Single | - |
| Power Max | - | 75W | - |
| Reverse Recovery Time trr | - | 60ns | - |
| Current Collector Ic Max | - | 16A | - |
| Voltage Collector Emitter Breakdown Max | - | 600V | - |
| IGBT Type | - | - | - |
| Current Collector Pulsed Icm | - | 30A | - |
| Vce on Max Vge Ic | - | 2.8V @ 15V, 10A | - |
| Switching Energy | - | 141μJ (on), 215μJ (off) | - |
| Gate Charge | - | 30nC | - |
| Td on off 25°C | - | 15ns/36ns | - |
| Test Condition | - | 300V, 10A, 20 Ohm, 15V | - |
| Pd Power Dissipation | - | 75 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Collector Emitter Voltage VCEO Max | - | 600 V | - |
| Collector Emitter Saturation Voltage | - | 2.2 V | - |
| Continuous Collector Current at 25 C | - | 16 A | - |
| Gate Emitter Leakage Current | - | +/- 100 nA | - |
| Maximum Gate Emitter Voltage | - | +/- 20 V | - |
| Continuous Collector Current Ic Max | - | 16 A | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
SGP10N60RUFDTU | IGBT Transistors Dis Short Circuit Rated IGBT | |
| SGP10N60RUF | ブランドニューオリジナル | ||
| SGP10N60RUFD | ブランドニューオリジナル | ||
| SGP10N60RUFD,SGP10N60RUF | ブランドニューオリジナル | ||
| SGP10N60RUFDTU(SG) | ブランドニューオリジナル | ||
ON Semiconductor |
SGP10N60RUFDTU | IGBT Transistors Dis Short Circuit Rated IGBT |