SGW5N

SGW5N60RUFDTM vs SGW5N60RUF vs SGW5N60RUFD

 
PartNumberSGW5N60RUFDTMSGW5N60RUFSGW5N60RUFD
DescriptionIGBT Transistors
ManufacturerON SemiconductorFairchild Semiconductor-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseD2PAK-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.5 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C8 A--
Pd Power Dissipation60 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingReelTape & Reel (TR)-
Continuous Collector Current Ic Max8 A--
Height4.83 mm--
Length10.67 mm--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity800--
SubcategoryIGBTs--
Unit Weight0.079014 oz--
Series---
Package Case-TO-263-3, D2Pak (2 Leads + Tab), TO-263AB-
Input Type-Standard-
Mounting Type-Surface Mount-
Supplier Device Package-D2PAK-
Power Max-60W-
Reverse Recovery Time trr-55ns-
Current Collector Ic Max-8A-
Voltage Collector Emitter Breakdown Max-600V-
IGBT Type---
Current Collector Pulsed Icm-15A-
Vce on Max Vge Ic-2.8V @ 15V, 5A-
Switching Energy-88μJ (on), 107μJ (off)-
Gate Charge-16nC-
Td on off 25°C-13ns/34ns-
Test Condition-300V, 5A, 40 Ohm, 15V-
メーカー モデル 説明 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
SGW5N60RUFDTM IGBT Transistors
SGW5N60RUF ブランドニューオリジナル
SGW5N60RUFD ブランドニューオリジナル
SGW5N60RUFTM ブランドニューオリジナル
ON Semiconductor
ON Semiconductor
SGW5N60RUFDTM IGBT 600V 8A 60W D2PAK
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