 |  | | |
| PartNumber | SI1401EDH-T1-GE3 | SI1401EDH-T1-GE | SI1401EDH-T1-GE3-CUT TAPE |
| Description | MOSFET -12V Vds 10V Vgs SC70-6 | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-363-6 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 12 V | - | - |
| Id Continuous Drain Current | 4 A | - | - |
| Rds On Drain Source Resistance | 28 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 36 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Series | SI1 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 16 S | - | - |
| Fall Time | 985 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 420 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 1325 ns | - | - |
| Typical Turn On Delay Time | 160 ns | - | - |
| Part # Aliases | SI1401EDH-GE3 | - | - |
| Unit Weight | 0.000265 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI1401EDH-T1-GE3 | MOSFET -12V Vds 10V Vgs SC70-6 | |
| SI1401EDH-T1-GE | ブランドニューオリジナル | ||
| SI1401EDH-T1-GE3-CUT TAPE | ブランドニューオリジナル | ||
Vishay |
SI1401EDH-T1-GE3 | MOSFET P-CH 12V 4A SC-70-6 |