SI1469

SI1469DH-T1-E3 vs SI1469DH-T1-GE3 vs SI1469DH

 
PartNumberSI1469DH-T1-E3SI1469DH-T1-GE3SI1469DH
DescriptionMOSFET -20V Vds 12V Vgs SC70-6MOSFET -20V Vds 12V Vgs SC70-6
ManufacturerVishayVishayVISHAY
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSiSi
TradenameTrenchFETTrenchFET-
PackagingReelReelDigi-ReelR Alternate Packaging
SeriesSI1SI1TrenchFETR
BrandVishay / SiliconixVishay / Siliconix-
Product TypeMOSFETMOSFET-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Part # AliasesSI1469DH-E3--
Unit Weight0.000265 oz0.000265 oz0.000265 oz
Part Aliases--SI1469DH-E3
Mounting Style--SMD/SMT
Package Case--6-TSSOP, SC-88, SOT-363
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Number of Channels--1 Channel
Supplier Device Package--SC-70-6 (SOT-363)
Configuration--Single
FET Type--MOSFET P-Channel, Metal Oxide
Power Max--2.78W
Transistor Type--1 P-Channel
Drain to Source Voltage Vdss--20V
Input Capacitance Ciss Vds--470pF @ 10V
FET Feature--Standard
Current Continuous Drain Id 25°C--2.7A (Tc)
Rds On Max Id Vgs--80 mOhm @ 2A, 10V
Vgs th Max Id--1.5V @ 250μA
Gate Charge Qg Vgs--8.5nC @ 4.5V
Pd Power Dissipation--1.5 W
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Fall Time--15 ns 9 ns
Rise Time--48 ns 20 ns
Vgs Gate Source Voltage--12 V
Id Continuous Drain Current--3.2 A
Vds Drain Source Breakdown Voltage--- 20 V
Rds On Drain Source Resistance--155 mOhms
Transistor Polarity--P-Channel
Typical Turn Off Delay Time--27 ns 22 ns
Typical Turn On Delay Time--27 ns 5 ns
Channel Mode--Enhancement
メーカー モデル 説明 RFQ
Vishay / Siliconix
Vishay / Siliconix
SI1469DH-T1-E3 MOSFET -20V Vds 12V Vgs SC70-6
SI1469DH-T1-GE3 MOSFET -20V Vds 12V Vgs SC70-6
SI1469DH ブランドニューオリジナル
Vishay
Vishay
SI1469DH-T1-E3 MOSFET P-CH 20V 2.7A SC70-6
SI1469DH-T1-GE3 IGBT Transistors MOSFET P-CHANNEL 20-V (GS) MOSFET
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