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| PartNumber | SI2366DS-T1-GE3 | SI2365EDS-T1-GE3 | SI2367DS-T1-GE3 |
| Description | MOSFET 30V Vds 20V Vgs SOT-23 | MOSFET -20V Vds 8V Vgs SOT-23 | MOSFET -20V Vds 8V Vgs SOT-23 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 20 V | - |
| Id Continuous Drain Current | 5.8 A | 5.9 A | - |
| Rds On Drain Source Resistance | 36 mOhms | 26.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1 V | - |
| Vgs Gate Source Voltage | 10 V | 8 V | - |
| Qg Gate Charge | 6.4 nC | 36 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2.1 W | 1.7 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Height | 1.45 mm | 1.45 mm | 1.45 mm |
| Length | 2.9 mm | 2.9 mm | 2.9 mm |
| Series | SI2 | SI2 | SI2 |
| Transistor Type | 1 N-Channel | 1 P-Channel | - |
| Width | 1.6 mm | 1.6 mm | 1.6 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 13 S | - | - |
| Fall Time | 8 ns | 14 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 12 ns | 21 ns | - |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 14 ns | 62 ns | - |
| Typical Turn On Delay Time | 5 ns | 22 ns | - |
| Part # Aliases | SI2366DS-GE3 | SI4816DY-T1-E3-S | SI2367DS-GE3 |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI2366DS-T1-GE3 | MOSFET 30V Vds 20V Vgs SOT-23 | |
| SI2369DS-T1-GE3 | MOSFET -30V Vds 20V Vgs SOT-23 | ||
| SI2365EDS-T1-GE3 | MOSFET -20V Vds 8V Vgs SOT-23 | ||
| SI2367DS-T1-GE3 | MOSFET -20V Vds 8V Vgs SOT-23 | ||
| SI2365EDS-T1-E3 | ブランドニューオリジナル | ||
| SI2367DS-T1-E3 | ブランドニューオリジナル | ||
| SI2365EDS-T1-GE3-CUT TAPE | ブランドニューオリジナル | ||
Vishay |
SI2365EDS-T1-GE3 | MOSFET P-CH 20V 5.9A TO-236 | |
| SI2366DS-T1-GE3 | MOSFET N-CH 30V 5.8A SOT-23 | ||
| SI2367DS-T1-GE3 | MOSFET P-CH 20V 3.8A SOT-23 | ||
| SI2369DS-T1-GE3 | MOSFET P-CH 30V 7.6A TO-236 |