 |  | | |
| PartNumber | SI4825DDY-T1-GE3 | SI4825DDY | SI4825DY |
| Description | MOSFET -30V Vds 25V Vgs SO-8 | MOSFET 30V 11.5A 3W | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 14.9 A | - | - |
| Rds On Drain Source Resistance | 12.5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.4 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 57 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 5 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Series | SI4 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 28 S | - | - |
| Fall Time | 9 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 12 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 40 ns | - | - |
| Typical Turn On Delay Time | 13 ns | - | - |
| Part # Aliases | SI4825DDY-GE3 | - | - |
| Unit Weight | 0.006596 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4825DDY-T1-GE3 | MOSFET -30V Vds 25V Vgs SO-8 | |
| SI4825DDY | ブランドニューオリジナル | ||
| SI4825DY | MOSFET 30V 11.5A 3W | ||
| SI4825DY T1-E3 | ブランドニューオリジナル | ||
Vishay |
SI4825DDY-T1-GE3 | MOSFET P-CH 30V 14.9A 8SOIC | |
| SI4825DY-T1-E3 | MOSFET P-CH 30V 8.1A 8-SOIC | ||
| SI4825DY-T1-GE3 | MOSFET P-CH 30V 8.1A 8-SOIC |