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| PartNumber | SI4830ADY-T1-E3 | SI4830CDY-T1-E3 | SI4830ADY-T1-GE3 |
| Description | MOSFET RECOMMENDED ALT 781-SI4816BDY-T1-GE3 | RF Bipolar Transistors MOSFET 30V 8.0A 2.9W 20mohm @ 10V | MOSFET 2N-CH 30V 5.7A 8-SOIC |
| Manufacturer | Vishay | Vishay Siliconix | - |
| Product Category | MOSFET | IC Chips | - |
| RoHS | E | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-8 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | Tape & Reel (TR) | - |
| Series | SI4 | LITTLE FOOTR | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SI4830ADY-E3 | - | - |
| Unit Weight | 0.006596 oz | 0.017870 oz | - |
| Part Aliases | - | SI4830CDY-E3 | - |
| Package Case | - | 8-SOIC (0.154", 3.90mm Width) | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Number of Channels | - | 2 Channel | - |
| Supplier Device Package | - | 8-SO | - |
| Configuration | - | Dual with Schottky Diode | - |
| FET Type | - | 2 N-Channel (Half Bridge) | - |
| Power Max | - | 2.9W | - |
| Transistor Type | - | 2 N-Channel | - |
| Drain to Source Voltage Vdss | - | 30V | - |
| Input Capacitance Ciss Vds | - | 950pF @ 15V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 8A | - |
| Rds On Max Id Vgs | - | 20 mOhm @ 8A, 10V | - |
| Vgs th Max Id | - | 3V @ 1mA | - |
| Gate Charge Qg Vgs | - | 25nC @ 10V | - |
| Pd Power Dissipation | - | 2 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 12 ns | - |
| Rise Time | - | 12 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 5.7 A | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Rds On Drain Source Resistance | - | 20 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 18 ns 18 ns | - |
| Typical Turn On Delay Time | - | 17 ns | - |
| Channel Mode | - | Enhancement | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4830CDY-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI4816BDY-T1-GE3 | |
| SI4830ADY-T1-E3 | MOSFET RECOMMENDED ALT 781-SI4816BDY-T1-GE3 | ||
Vishay |
SI4830CDY-T1-E3 | RF Bipolar Transistors MOSFET 30V 8.0A 2.9W 20mohm @ 10V | |
| SI4830ADY-T1-E3 | MOSFET 2N-CH 30V 5.7A 8-SOIC | ||
| SI4830CDY-T1-GE3 | MOSFET 2N-CH 30V 8A 8-SOIC | ||
| SI4830ADY-T1-GE3 | MOSFET 2N-CH 30V 5.7A 8-SOIC | ||
| SI4830 | ブランドニューオリジナル | ||
| SI4830-A10-GU | ブランドニューオリジナル | ||
| SI4830-A10-GUR | ブランドニューオリジナル | ||
| SI4830A | ブランドニューオリジナル | ||
| SI4830ADY | ブランドニューオリジナル | ||
| SI4830CDY | ブランドニューオリジナル | ||
| SI4830CDY-T1 | ブランドニューオリジナル | ||
| SI4830DY-T1 | ブランドニューオリジナル | ||
| SI4830DY-T1-E3 | ブランドニューオリジナル | ||
| SI4830ADY-T1-E3-S | ブランドニューオリジナル | ||
Silicon Labs |
SI4830-A20-GU | RF RX AM/FM 520KHZ-1.71MHZ SSOP |