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| PartNumber | SI5432DC-T1-GE3 | SI5432DC-T1-E3 | SI5432DC-T1-GE3-S |
| Description | Darlington Transistors MOSFET 20V 6.0A 6.3W 20mohm @ 4.5V | ||
| Manufacturer | VISHAY | - | - |
| Product Category | FETs - Single | - | - |
| Packaging | Reel | - | - |
| Part Aliases | SI5432DC-GE3 | - | - |
| Unit Weight | 0.002998 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | ChipFET-8 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single Hex Drain | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 12 ns | - | - |
| Rise Time | 10 ns | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Id Continuous Drain Current | 6 A | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Rds On Drain Source Resistance | 20 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 35 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Channel Mode | Enhancement | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay |
SI5432DC-T1-GE3 | Darlington Transistors MOSFET 20V 6.0A 6.3W 20mohm @ 4.5V | |
| SI5432DC-T1-E3 | ブランドニューオリジナル | ||
| SI5432DC-T1-GE3-S | ブランドニューオリジナル | ||
| SI5432DC-T1-GE3/AJXA3 | ブランドニューオリジナル |