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| PartNumber | SI6562CDQ-T1-GE3 | SI6562CDQ-T1-GE3-CUT TAPE | SI6562CDQ-T1-E3 |
| Description | MOSFET -20V Vds 12V Vgs TSSOP-8 N&P PAIR | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSSOP-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 6.7 A, 6.1 A | - | - |
| Rds On Drain Source Resistance | 22 mOhms, 30 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 600 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 15 nC, 34 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.6 W, 1.7 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Series | SI6 | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 17 S, 22 S | - | - |
| Fall Time | 10 ns, 15 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10 ns, 25 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 25 ns, 45 ns | - | - |
| Typical Turn On Delay Time | 12 ns, 30 ns | - | - |
| Part # Aliases | SI6562CDQ-GE3 | - | - |
| Unit Weight | 0.005573 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI6562CDQ-T1-GE3 | MOSFET -20V Vds 12V Vgs TSSOP-8 N&P PAIR | |
| SI6562CDQ-T1-GE3-CUT TAPE | ブランドニューオリジナル | ||
| SI6562CDQ-T1-E3 | ブランドニューオリジナル | ||
Vishay |
SI6562CDQ-T1-GE3 | MOSFET N/P-CH 20V 6.7A 8-TSSOP |