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| PartNumber | SI6963BDQ-T1-GE3 | SI6963BDQ-T1-E3 | SI6963BDQ-GE3 |
| Description | MOSFET RECOMMENDED ALT 781-SI6926ADQ-T1-GE3 | IGBT Transistors MOSFET 20V 3.5A 1W | |
| Manufacturer | Vishay | Vishay Siliconix | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSSOP-8 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | Digi-ReelR | - |
| Height | 1.2 mm | - | - |
| Length | 4.4 mm | - | - |
| Series | SI6 | - | - |
| Width | 3 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SI6963BDQ-GE3 | - | - |
| Unit Weight | 0.005573 oz | - | - |
| Package Case | - | 8-TSSOP (0.173", 4.40mm Width) | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | 8-TSSOP | - |
| FET Type | - | 2 P-Channel (Dual) | - |
| Power Max | - | 830mW | - |
| Drain to Source Voltage Vdss | - | 20V | - |
| Input Capacitance Ciss Vds | - | - | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 3.4A | - |
| Rds On Max Id Vgs | - | 45 mOhm @ 3.9A, 4.5V | - |
| Vgs th Max Id | - | 1.4V @ 250μA | - |
| Gate Charge Qg Vgs | - | 11nC @ 4.5V | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI6963BDQ-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI6926ADQ-T1-GE3 | |
Vishay |
SI6963BDQ-T1-E3 | IGBT Transistors MOSFET 20V 3.5A 1W | |
| SI6963BDQ-T1-GE3 | ブランドニューオリジナル | ||
| SI6963BDQ-GE3 | ブランドニューオリジナル |