 |  | | |
| PartNumber | SI7116DN-T1-E3 | SI7116 | SI7116DN |
| Description | MOSFET 40V 16.4A 3.8W 7.8mohm @ 10V | ||
| Manufacturer | Vishay | SI | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-1212-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 16.4 A | - | - |
| Rds On Drain Source Resistance | 7.8 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 15 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 3.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Series | SI7 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 68 S | - | - |
| Fall Time | 10 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 36 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Part # Aliases | SI7116DN-E3 | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI7116DN-T1-GE3 | MOSFET 40V 16.4A 3.8W 7.8mohm @ 10V | |
| SI7116DN-T1-E3 | MOSFET 40V 16.4A 3.8W 7.8mohm @ 10V | ||
| SI7116DN-T1-E3-CUT TAPE | ブランドニューオリジナル | ||
| SI7116 | ブランドニューオリジナル | ||
| SI7116DN | ブランドニューオリジナル | ||
| SI7116DN-T1-GE3 7116 | ブランドニューオリジナル | ||
Vishay |
SI7116DN-T1-E3 | MOSFET N-CH 40V 10.5A 1212-8 | |
| SI7116DN-T1-GE3 | MOSFET N-CH 40V 10.5A 1212-8 |