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| PartNumber | SI7149ADP-T1-GE3 | SI7149 | SI7149ADP |
| Description | MOSFET -30V Vds 25V Vgs PowerPAK SO-8 | ||
| Manufacturer | Vishay | - | Vishay Siliconix |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | PowerPAK-SO-8 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | P-Channel | - | P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 50 A | - | - |
| Rds On Drain Source Resistance | 4.2 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 25 V | - | - |
| Qg Gate Charge | 135 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 48 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | TrenchFET | - | TrenchFET Power MOSFET |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Series | SI7 | - | TrenchFETR |
| Transistor Type | 1 P-Channel | - | 1 P-Channel |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 60 S | - | - |
| Fall Time | 12 ns | - | 12 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 12 ns | - | 12 ns |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 58 ns | - | 58 ns |
| Typical Turn On Delay Time | 15 ns | - | 15 ns |
| Unit Weight | 0.005291 oz | - | - |
| Package Case | - | - | PowerPAKR SO-8 |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | PowerPAKR SO-8 |
| FET Type | - | - | MOSFET P-Channel, Metal Oxide |
| Power Max | - | - | 48W |
| Drain to Source Voltage Vdss | - | - | 30V |
| Input Capacitance Ciss Vds | - | - | 5125pF @ 15V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 50A (Tc) |
| Rds On Max Id Vgs | - | - | 5.2 mOhm @ 15A, 10V |
| Vgs th Max Id | - | - | 2.5V @ 250μA |
| Gate Charge Qg Vgs | - | - | 135nC @ 10V |
| Pd Power Dissipation | - | - | 48 W |
| Vgs Gate Source Voltage | - | - | 25 V |
| Id Continuous Drain Current | - | - | - 50 A |
| Vds Drain Source Breakdown Voltage | - | - | - 30 V |
| Vgs th Gate Source Threshold Voltage | - | - | - 2.5 V |
| Rds On Drain Source Resistance | - | - | 5.2 mOhms |
| Qg Gate Charge | - | - | 43.1 nC |
| Forward Transconductance Min | - | - | 60 S |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI7149ADP-T1-GE3 | MOSFET -30V Vds 25V Vgs PowerPAK SO-8 | |
| SI7149DP-T1-GE3 | MOSFET 30V 50A 69W 5.2mohm @ 10V | ||
| SI7149ADP-T1-GE3-CUT TAPE | ブランドニューオリジナル | ||
| SI7149 | ブランドニューオリジナル | ||
| SI7149ADP | ブランドニューオリジナル | ||
| SI7149DP | ブランドニューオリジナル | ||
| SI7149DP-T1-E3 | ブランドニューオリジナル | ||
Vishay |
SI7149ADP-T1-GE3 | MOSFET P-CH 30V 50A PPAK SO-8 | |
| SI7149DP-T1-GE3 | MOSFET P-CH 30V 50A PPAK SO-8 |