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| PartNumber | SI7489DP-T1-E3 | SI7485DP-T1-GE3 | SI7483ADP-T1-E3 |
| Description | MOSFET -100V Vds 20V Vgs PowerPAK SO-8 | MOSFET RECOMMENDED ALT 78-SI7149ADP-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI7139DP-T1-GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | Y | E |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 28 A | - | - |
| Rds On Drain Source Resistance | 41 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 106 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 83 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SI7 | SI7 | SI7 |
| Transistor Type | 1 P-Channel | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 38 S | - | - |
| Fall Time | 100 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 20 ns, 160 ns | - | - |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 100 ns, 110 ns | - | - |
| Typical Turn On Delay Time | 15 ns, 42 ns | - | - |
| Part # Aliases | SI7489DP-E3 | SI7485DP-GE3 | SI7483ADP-E3 |
| Unit Weight | 0.017870 oz | 0.017870 oz | 0.017870 oz |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI7489DP-T1-GE3 | MOSFET -100V Vds 20V Vgs PowerPAK SO-8 | |
| SI7489DP-T1-E3 | MOSFET -100V Vds 20V Vgs PowerPAK SO-8 | ||
| SI7485DP-T1-GE3 | MOSFET RECOMMENDED ALT 78-SI7149ADP-T1-GE3 | ||
| SI7483ADP-T1-E3 | MOSFET RECOMMENDED ALT 781-SI7139DP-T1-GE3 | ||
| SI7489DP-T1-GE3. | MOSFET P-CHANNEL 100-V (D-S) MOSFET | ||
Vishay |
SI7485DP-T1-GE3 | IGBT Transistors MOSFET 20V 20A 5.0W 7.3mohm @ 4.5V | |
| SI7485DP-T1-E3 | IGBT Transistors MOSFET 20V 20A 5W | ||
| SI7483ADP-T1-E3 | IGBT Transistors MOSFET 30V 24A 5.4W 5.7mohm @ 10V | ||
| SI7489DP-T1-E3 | MOSFET P-CH 100V 28A PPAK SO-8 | ||
| SI7489DP-T1-GE3 | MOSFET P-CH 100V 28A PPAK SO-8 | ||
| SI7483ADP-T1-GE3 | MOSFET P-CH 30V 14A PPAK SO-8 | ||
| SI7483A | ブランドニューオリジナル | ||
| SI7483ADP | ブランドニューオリジナル | ||
| SI7483DP | ブランドニューオリジナル | ||
| SI7483DP-T1 | ブランドニューオリジナル | ||
| SI7483DP-T1-E3 | ブランドニューオリジナル | ||
| SI74847 | ブランドニューオリジナル | ||
| SI7485DP | ブランドニューオリジナル | ||
| SI7485DP-T1 | ブランドニューオリジナル |