SI7842D

SI7842DP vs SI7842DP-T1 vs SI7842DP-T1-E3

 
PartNumberSI7842DPSI7842DP-T1SI7842DP-T1-E3
DescriptionMOSFET RECOMMENDED ALT 781-SIR770DP-T1-GE3MOSFET 2N-CH 30V 6.3A PPAK SO-8
ManufacturerVISHAYVISHAYVISHAY
Product CategoryFETs - ArraysFETs - ArraysFETs - Arrays
Series--LITTLE FOOTR
Packaging--Digi-ReelR
Package Case--PowerPAKR SO-8 Dual
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--PowerPAKR SO-8 Dual
FET Type--2 N-Channel (Dual)
Power Max--1.4W
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds---
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--6.3A
Rds On Max Id Vgs--22 mOhm @ 7.5A, 10V
Vgs th Max Id--2.4V @ 250μA
Gate Charge Qg Vgs--20nC @ 10V
メーカー モデル 説明 RFQ
SI7842DP ブランドニューオリジナル
SI7842DP-T1 MOSFET RECOMMENDED ALT 781-SIR770DP-T1-GE3
SI7842DP-TI-E3 ブランドニューオリジナル
Vishay
Vishay
SI7842DP-T1-E3 MOSFET 2N-CH 30V 6.3A PPAK SO-8
SI7842DP-T1-GE3 MOSFET 2N-CH 30V 6.3A PPAK SO-8
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