 | | |
| PartNumber | SI7922DN-T1-E3 | SI7922DN-T1-GE3 |
| Description | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | E | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | - |
| Package / Case | PowerPAK-1212-8 | - |
| Number of Channels | 2 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | - |
| Id Continuous Drain Current | 2.5 A | - |
| Rds On Drain Source Resistance | 195 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 8 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 2.6 W | - |
| Configuration | Dual | - |
| Channel Mode | Enhancement | - |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Height | 1.04 mm | - |
| Length | 3.3 mm | - |
| Series | SI7 | SI7 |
| Transistor Type | 2 N-Channel | - |
| Width | 3.3 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 5.3 S | - |
| Fall Time | 11 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 11 ns | - |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 8 ns | - |
| Typical Turn On Delay Time | 7 ns | - |
| Part # Aliases | SI7922DN-T1 | SI7922DN-GE3 |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI7922DN-T1-E3 | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 | |
| SI7922DN-T1-GE3 | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 | ||
Vishay |
SI7922DN-T1-GE3 | IGBT Transistors MOSFET Dual N-Ch 100V 195 mohm @ 4.5V | |
| SI7922DN-T1-E3 | IGBT Transistors MOSFET DUAL N-CH 100V (D-S) | ||
| SI7922DN-T1-E3-CUT TAPE | ブランドニューオリジナル | ||
| SI7922DN-T1 | MOSFET Transistor, Matched Pair, N-Channel, LLCC |