 | |  | |
| PartNumber | SIA445EDJ-T1-GE3 | SIA445EDJT-T1-GE3 | SIA445EDJ |
| Description | MOSFET -20V Vds 12V Vgs PowerPAK SC-70 | MOSFET -20V Vds 12V Vgs Thin PowerPAK SC-70 | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | E | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-SC70-6 | PowerPAK-SC70-6 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
| Id Continuous Drain Current | 12 A | 12 A | - |
| Rds On Drain Source Resistance | 16.5 mOhms | 13.8 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | - |
| Vgs Gate Source Voltage | 12 V | 12 V | - |
| Qg Gate Charge | 48 nC | 69 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 19 W | 19 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | TrenchFET, PowerPAK | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Series | SIA | SIA | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 29 S | 34 S | - |
| Fall Time | 20 ns | 25 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 25 ns | 25 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 55 ns | 50 ns | - |
| Typical Turn On Delay Time | 25 ns | 25 ns | - |
| Part # Aliases | SIA445EDJ-GE3 | - | - |
| Height | - | 0.75 mm | - |
| Length | - | 2.05 mm | - |
| Transistor Type | - | 1 P-Channel | - |
| Width | - | 2.05 mm | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIA445EDJ-T1-GE3 | MOSFET -20V Vds 12V Vgs PowerPAK SC-70 | |
| SIA445EDJT-T1-GE3 | MOSFET -20V Vds 12V Vgs Thin PowerPAK SC-70 | ||
| SIA445EDJ | ブランドニューオリジナル | ||
Vishay |
SIA445EDJ-T1-GE3 | MOSFET P-CH 20V 12A SC-70 | |
| SIA445EDJT-T1-GE3 | P-Channel 20 V (D-S) MOSFET |