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| PartNumber | SIA922EDJ-T1-G | SIA922EDJ-T1-GE3 | SIA922EDJ-T4-GE3 |
| Description | MOSFET 2N-CH 30V 4.5A SC70-6 | MOSFET N-CH 30V SMD | |
| Manufacturer | - | Vishay Siliconix | - |
| Product Category | - | IC Chips | - |
| Series | - | TrenchFETR | - |
| Packaging | - | Digi-ReelR Alternate Packaging | - |
| Part Aliases | - | SI1972DH-T1-GE3 | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | PowerPAKR SC-70-6 Dual | - |
| Technology | - | Si | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Number of Channels | - | 2 Channel | - |
| Supplier Device Package | - | PowerPAKR SC-70-6 Dual | - |
| Configuration | - | Dual | - |
| FET Type | - | 2 N-Channel (Dual) | - |
| Power Max | - | 7.8W | - |
| Transistor Type | - | 2 N-Channel | - |
| Drain to Source Voltage Vdss | - | 30V | - |
| Input Capacitance Ciss Vds | - | - | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 4.5A | - |
| Rds On Max Id Vgs | - | 64 mOhm @ 3A, 4.5V | - |
| Vgs th Max Id | - | 1.4V @ 250μA | - |
| Gate Charge Qg Vgs | - | 12nC @ 10V | - |
| Pd Power Dissipation | - | 1.9 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 45 ns | - |
| Rise Time | - | 60 ns | - |
| Vgs Gate Source Voltage | - | 12 V | - |
| Id Continuous Drain Current | - | 4.5 A | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Vgs th Gate Source Threshold Voltage | - | 1.4 V | - |
| Rds On Drain Source Resistance | - | 64 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 25 ns | - |
| Typical Turn On Delay Time | - | 20 ns | - |
| Qg Gate Charge | - | 12 nC | - |
| Forward Transconductance Min | - | 13 S | - |
| Channel Mode | - | Enhancement | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
| SIA922EDJ-T1-G | ブランドニューオリジナル | ||
Vishay |
SIA922EDJ-T1-GE3 | MOSFET 2N-CH 30V 4.5A SC70-6 | |
| SIA922EDJ-T4-GE3 | MOSFET N-CH 30V SMD |