SIA923

SIA923EDJ-T1-GE3 vs SIA923AEDJ-T1-GE3 vs SIA923EDJ-T1-GE3-CUT TAPE

 
PartNumberSIA923EDJ-T1-GE3SIA923AEDJ-T1-GE3SIA923EDJ-T1-GE3-CUT TAPE
DescriptionMOSFET -20V Vds 8V Vgs PowerPAK SC-70MOSFET -20V [email protected] -4.5A P-CH
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SC70-6PowerPAK-SC70-6-
Number of Channels2 Channel2 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current4.5 A4.5 A-
Rds On Drain Source Resistance44 mOhms, 44 mOhms44 mOhms-
Vgs th Gate Source Threshold Voltage1.4 V900 mV-
Vgs Gate Source Voltage8 V8 V-
Qg Gate Charge25 nC, 25 nC25 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation7.8 W7.8 W-
ConfigurationDualDual-
Channel ModeEnhancementEnhancement-
TradenameTrenchFET, PowerPAKTrenchFET-
PackagingReelReel-
Height0.75 mm0.75 mm-
Length2.05 mm2.05 mm-
SeriesSIASIA-
Transistor Type2 P-Channel2 P-Channel-
Width2.05 mm2.05 mm-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min11 S, 11 S11 S-
Fall Time10 ns, 10 ns10 ns-
Product TypeMOSFETMOSFET-
Rise Time16 ns, 16 ns16 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time30 ns, 30 ns30 ns-
Typical Turn On Delay Time15 ns, 15 ns15 ns-
Part # AliasesSIA923EDJ-GE3--
Unit Weight0.000988 oz0.000988 oz-
メーカー モデル 説明 RFQ
Vishay / Siliconix
Vishay / Siliconix
SIA923EDJ-T4-GE3 MOSFET -20V Vds 8V Vgs PowerPAK SC-70
SIA923EDJ-T1-GE3 MOSFET -20V Vds 8V Vgs PowerPAK SC-70
SIA923AEDJ-T1-GE3 MOSFET -20V [email protected] -4.5A P-CH
SIA923EDJ-T1-GE3-CUT TAPE ブランドニューオリジナル
SIA923EDJ-T1-GE3CT ブランドニューオリジナル
SIA923EDJ-TI-GE3 ブランドニューオリジナル
Vishay
Vishay
SIA923EDJ-T1-GE3 MOSFET 2P-CH 20V 4.5A SC-70-6
SIA923AEDJ-T1-GE3 Trans MOSFET P-CH Si 20V 4.5A 6-Pin PowerPAK SC-70
SIA923EDJ-T4-GE3 MOSFET P-CH 20V SC-70-6
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