 | | |
| PartNumber | SIDR626DP-T1-GE3 | SIDR622DP-T1-GE3 |
| Description | MOSFET 60V Vds 20V Vgs PowerPAK SO-8DC | MOSFET 150V Vds 20V Vgs PowerPAK SO-8DC |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8DC-8 | PowerPAK-SO-8DC-8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 150 V |
| Id Continuous Drain Current | 100 A | 64.6 A |
| Rds On Drain Source Resistance | 1.7 mOhms | 17.7 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2.5 V |
| Vgs Gate Source Voltage | 10 V | 10 V |
| Qg Gate Charge | 68 nC | 27 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 125 W | 125 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Series | SID | SID |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 78 S | 33 S |
| Fall Time | 11 ns | 6 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 24 ns | 6 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 30 ns | 18 ns |
| Typical Turn On Delay Time | 16 ns | 13 ns |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIDR626DP-T1-GE3 | MOSFET 60V Vds 20V Vgs PowerPAK SO-8DC | |
| SIDR622DP-T1-GE3 | MOSFET 150V Vds 20V Vgs PowerPAK SO-8DC | ||
Vishay |
SIDR622DP-T1-GE3 | MOSFET N-CHAN 150V | |
| SIDR626DP-T1-GE3 | MOSFET N-CHAN 60V | ||
| SIDR626DP | ブランドニューオリジナル |