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| PartNumber | SIHB12N50E-GE3 | SIHB12N50C-E3 |
| Description | MOSFET 500V Vds 30V Vgs D2PAK (TO-263) | MOSFET N-Channel 500V |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 550 V | 560 V |
| Id Continuous Drain Current | 10.5 A | 12 A |
| Rds On Drain Source Resistance | 380 mOhms | 555 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | 5 V |
| Vgs Gate Source Voltage | 30 V | 30 V |
| Qg Gate Charge | 25 nC | 32 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 114 W | 208 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Bulk | Bulk |
| Series | E | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 12 ns | 6 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 16 ns | 35 ns |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 29 ns | 23 ns |
| Typical Turn On Delay Time | 13 ns | 18 ns |
| Unit Weight | 0.050717 oz | 0.050717 oz |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHB12N50E-GE3 | MOSFET 500V Vds 30V Vgs D2PAK (TO-263) | |
| SIHB12N50C-E3 | MOSFET N-Channel 500V | ||
Vishay |
SIHB12N50C-E3 | IGBT Transistors MOSFET N-Channel 500V | |
| SIHB12N50E-GE3 | IGBT Transistors MOSFET N-Channel 500V | ||
| SIHB12N50C | ブランドニューオリジナル |