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| PartNumber | SIHB12N60E-GE3 | SIHB12N60ET1-GE3 | SIHB12N60ET5-GE3 |
| Description | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | MOSFET N-Channel 600V | MOSFET N-Channel 600V |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | 650 V |
| Id Continuous Drain Current | 12 A | 12 A | 12 A |
| Rds On Drain Source Resistance | 380 mOhms | 380 mOhms | 380 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V | 4 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 29 nC | 29 nC | 29 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 147 W | 147 W | 147 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | - | - |
| Series | E | E | E |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 19 ns | 19 ns | 19 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 19 ns | 19 ns | 19 ns |
| Factory Pack Quantity | 1000 | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 35 ns | 35 ns | 35 ns |
| Typical Turn On Delay Time | 14 ns | 14 ns | 14 ns |
| Unit Weight | 0.050717 oz | 0.077603 oz | 0.077603 oz |
| Height | - | 4.83 mm | 4.83 mm |
| Length | - | 10.67 mm | 10.67 mm |
| Width | - | 9.65 mm | 9.65 mm |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHB12N65E-GE3 | MOSFET 650V Vds 30V Vgs D2PAK (TO-263) | |
| SIHB12N60E-GE3 | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | ||
| SIHB12N60ET1-GE3 | MOSFET N-Channel 600V | ||
| SIHB12N60ET5-GE3 | MOSFET N-Channel 600V | ||
Vishay |
SIHB12N60E-GE3 | Darlington Transistors MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS | |
| SIHB12N65E-GE3 | IGBT Transistors MOSFET 650V 392mOhm@10V 12A N-Ch E-SRS | ||
| SIHB12N60ET1-GE3 | MOSFET N-CH 600V 12A TO263 | ||
| SIHB12N60ET5-GE3 | MOSFET N-CH 600V 12A TO263 | ||
| SIHB12N60E | ブランドニューオリジナル | ||
| SIHB12N60EGE3 | Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| SIHB12N65E | ブランドニューオリジナル |