SIHD6N65ET stock, SIHD6N65ET, SIHD6N65ET1-GE3


PartNumber	SIHD6N65ET1-GE3	SIHD6N65ET4-GE3	SIHD6N65ET5-GE3
Description	MOSFET 650V Vds E Series DPAK TO-252	MOSFET 650V Vds E Series DPAK TO-252	MOSFET 650V Vds E Series DPAK TO-252
Manufacturer	Vishay	Vishay	Vishay
Product Category	MOSFET	MOSFET	MOSFET
RoHS	Y	Y	Y
Technology	Si	Si	Si
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	TO-252-3	TO-252-3	TO-252-3
Number of Channels	1 Channel	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	650 V	650 V	650 V
Id Continuous Drain Current	7 A	7 A	7 A
Rds On Drain Source Resistance	500 mOhms	500 mOhms	500 mOhms
Vgs th Gate Source Threshold Voltage	4 V	4 V	4 V
Vgs Gate Source Voltage	30 V	30 V	30 V
Qg Gate Charge	24 nC	24 nC	24 nC
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Pd Power Dissipation	78 W	78 W	78 W
Configuration	Single	Single	Single
Packaging	Reel	Reel	Reel
Series	E	E	E
Brand	Vishay / Siliconix	Vishay / Siliconix	Vishay / Siliconix
Fall Time	20 ns	20 ns	20 ns
Product Type	MOSFET	MOSFET	MOSFET
Rise Time	12 ns	12 ns	12 ns
Factory Pack Quantity	2000	2000	2000
Subcategory	MOSFETs	MOSFETs	MOSFETs
Typical Turn Off Delay Time	30 ns	30 ns	30 ns
Typical Turn On Delay Time	14 ns	14 ns	14 ns
Unit Weight	0.011993 oz	0.011993 oz	0.011993 oz

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SIHD6N65ET