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| PartNumber | SIHF640S-GE3 | SIHF640S | SIHF644 |
| Description | MOSFET 200V Vds 20V Vgs D2PAK (TO-263) | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 18 A | - | - |
| Rds On Drain Source Resistance | 180 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 70 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 130 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Height | 4.83 mm | - | - |
| Length | 10.67 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.65 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 6.7 S | - | - |
| Fall Time | 36 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 51 ns | - | - |
| Factory Pack Quantity | 1 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 45 ns | - | - |
| Typical Turn On Delay Time | 14 ns | - | - |
