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| PartNumber | SIHFR9310TR-GE3 | SIHFR9310-GE3 |
| Description | MOSFET -400V Vds 20V Vgs DPAK (TO-252) | MOSFET -400V Vds 20V Vgs DPAK (TO-252) |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 400 V | 400 V |
| Id Continuous Drain Current | 1.8 A | 1.8 A |
| Rds On Drain Source Resistance | 7 Ohms | 7 Ohms |
| Vgs th Gate Source Threshold Voltage | - 4 V | - 4 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 13 nC | 13 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 50 W | 50 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Series | SIH | - |
| Transistor Type | 1 P-Channel | 1 P-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 0.91 S | 0.91 S |
| Fall Time | 24 ns | 24 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 10 ns | 10 ns |
| Factory Pack Quantity | 1 | 1 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 25 ns | 25 ns |
| Typical Turn On Delay Time | 11 ns | 11 ns |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHFR9310TR-GE3 | MOSFET -400V Vds 20V Vgs DPAK (TO-252) | |
| SIHFR9310-GE3 | MOSFET -400V Vds 20V Vgs DPAK (TO-252) | ||
| SIHFR9310TR-GE3 | Trans MOSFET P-CH 400V 1.8A 3-Pin(2+Tab) DPAK | ||
| SIHFR9310-GE3 | Trans MOSFET P-CH 400V 1.8A 3-Pin(2+Tab) TO-252AA | ||
| SIHFRC20TR-GE3 | Transistor MOSFET N-CH 600V 2A 3-Pin TO-252 T/R (Alt: SIHFRC20TR-GE3) | ||
| SIHFR9220 | ブランドニューオリジナル | ||
| SIHFR9220-GE3 | Trans MOSFET P-CH 200V 3.6A 3-Pin(2+Tab) TO-252AA | ||
| SIHFR9220TL-E3 | ブランドニューオリジナル | ||
| SIHFR9220TR-E3 | ブランドニューオリジナル | ||
| SIHFRC20-GE3 | ブランドニューオリジナル |