 |  | | |
| PartNumber | SIHFR9014-GE3 | SIHFR9014 | SIHFR9014-E3 |
| Description | MOSFET -60V Vds 20V Vgs DPAK (TO-252) | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 5.1 A | - | - |
| Rds On Drain Source Resistance | 500 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | - 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 12 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 25 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Series | SIH | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 1.4 S | - | - |
| Fall Time | 31 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 63 ns | - | - |
| Factory Pack Quantity | 1 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 9.6 ns | - | - |
| Typical Turn On Delay Time | 11 ns | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHFR9014-GE3 | MOSFET -60V Vds 20V Vgs DPAK (TO-252) | |
| SIHFR9014 | ブランドニューオリジナル | ||
| SIHFR9014-E3 | ブランドニューオリジナル |