 | |  | |
| PartNumber | SIHG30N60E-E3 | SIHG30N60E-GE3 | SIHG30N60AEL-GE3 |
| Description | MOSFET 600V Vds 30V Vgs TO-247AC | MOSFET 600V Vds 30V Vgs TO-247AC | MOSFET RECOMMENDED ALT 78-SIHG120N60E-GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247AC-3 | TO-247AC-3 | TO-247AC-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
| Id Continuous Drain Current | 29 A | 29 A | 28 A |
| Rds On Drain Source Resistance | 125 mOhms | 125 mOhms | 120 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V | 2 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 85 nC | 85 nC | 120 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 250 W | 250 W | 250 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | - |
| Series | E | E | EL |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 36 ns | 36 ns | 33 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 32 ns | 32 ns | 24 ns |
| Factory Pack Quantity | 500 | 500 | 1 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 63 ns | 63 ns | 79 ns |
| Typical Turn On Delay Time | 19 ns | 19 ns | 26 ns |
| Unit Weight | 1.340411 oz | 1.340411 oz | - |
| Forward Transconductance Min | - | - | 19 S |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHG35N60EF-GE3 | MOSFET 600V Vds 30V Vgs TO-247AC | |
| SIHG33N65EF-GE3 | MOSFET 650V Vds 30V Vgs TO-247AC | ||
| SIHG32N50D-E3 | MOSFET 500V Vds 30V Vgs TO-247AC | ||
| SIHG30N60E-E3 | MOSFET 600V Vds 30V Vgs TO-247AC | ||
| SIHG33N60EF-GE3 | MOSFET 600V Vds 30V Vgs TO-247AC | ||
| SIHG32N50D-GE3 | MOSFET 500V Vds 30V Vgs TO-247AC | ||
| SIHG30N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-247AC | ||
| SIHG33N65E-GE3 | MOSFET 650V Vds 30V Vgs TO-247AC | ||
| SIHG30N60AEL-GE3 | MOSFET RECOMMENDED ALT 78-SIHG120N60E-GE3 | ||
| SIHG33N60E-E3 | MOSFET 600V Vds 30V Vgs TO-247AC | ||
| SIHG33N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-247AC | ||
Vishay |
SIHG33N60E-GE3 | Darlington Transistors MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS | |
| SIHG33N60EF-GE3 | IGBT Transistors MOSFET 600V 98mOhms@10V 33A N-Ch MOSFET | ||
| SIHG33N60E-E3 | MOSFET N-CH 600V 33A TO247AC | ||
| SIHG30N60E-E3 | RF Bipolar Transistors MOSFET N-Channel 600V | ||
| SIHG32N50D-E3 | RF Bipolar Transistors MOSFET 500V 32A 390W 150mOhm @ 10V | ||
| SIHG30N60AEL-GE3 | MOSFET N-CHAN 600V TO-247AC | ||
| SIHG33N65EF-GE3 | MOSFET N-CH 650V 31.6A TO-247AC | ||
| SIHG30N60E-GE3 | MOSFET N-CH 600V 29A TO247AC | ||
| SIHG32N50D-GE3 | MOSFET N-CH 500V 30A TO-247AC | ||
| SIHG33N65E-GE3 | Trans MOSFET N-CH 650V 32.4A 3-Pin(3+Tab) TO-247AC | ||
| SIHG35N60E-GE3 | Power MOSFET | ||
| SIHG35N60EF-GE3 | EF Series Power MOSFET With Fast Body Diode TO-247AC, 97 m @ 10V | ||
| SIHG30N60E | ブランドニューオリジナル | ||
| SIHG30N60EGE3 | Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | ||
| SIHG33N60E | ブランドニューオリジナル | ||
| SIHG33N60E-G3 | ブランドニューオリジナル | ||
| SIHG33N60E-GE3,G33N60E, | ブランドニューオリジナル | ||
| SIHG33N60E-GE3,SIHG33N60 | ブランドニューオリジナル |