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| PartNumber | SIHP18N50C-E3 | SIHP18N50C | SIHP18N50C-E3,SIHP18N50C |
| Description | MOSFET 500V Vds 30V Vgs TO-220AB | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220AB-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Id Continuous Drain Current | 18 A | - | - |
| Rds On Drain Source Resistance | 225 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 5 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 65 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 223 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Brand | Vishay / Siliconix | - | - |
| Fall Time | 44 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 27 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 32 ns | - | - |
| Typical Turn On Delay Time | 80 ns | - | - |
| Unit Weight | 0.211644 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHP18N50C-E3 | MOSFET 500V Vds 30V Vgs TO-220AB | |
| SIHP18N50C | ブランドニューオリジナル | ||
| SIHP18N50C-E3,SIHP18N50C | ブランドニューオリジナル | ||
| SIHP18N50CE3 | Power Field-Effect Transistor, 18A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
Vishay |
SIHP18N50C-E3 | MOSFET N-CH 500V 18A TO220 |