 | | |
| PartNumber | SIHP33N60E-GE3 | SIHP33N60EF-GE3 |
| Description | MOSFET 600V Vds 30V Vgs TO-220AB | MOSFET 600V Vds 30V Vgs TO-220AB |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220AB-3 | TO-220AB-3 |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | - |
| Id Continuous Drain Current | 33 A | - |
| Rds On Drain Source Resistance | 99 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - |
| Vgs Gate Source Voltage | 30 V | - |
| Qg Gate Charge | 100 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 278 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Packaging | Tube | Tube |
| Height | 15.49 mm | - |
| Length | 10.41 mm | - |
| Series | E | EF |
| Width | 4.7 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 54 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 60 ns | - |
| Factory Pack Quantity | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 99 ns | - |
| Typical Turn On Delay Time | 28 ns | - |
| Unit Weight | 0.211644 oz | 0.211644 oz |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHP33N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | |
| SIHP33N60EF-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
Vishay |
SIHP33N60EF-GE3 | Darlington Transistors MOSFET 600V 98mOhms@10V 33A N-Ch MOSFET | |
| SIHP33N60E-GE3 | MOSFET N-CH 600V 33A TO-220AB | ||
| SIHP33N60E | ブランドニューオリジナル |