 |  | | |
| PartNumber | SIHW21N80AE-GE3 | SIHW22N65E-GE3 | SIHW23N-60E-GE3 |
| Description | MOSFET E Series Power MOSFET | RF Bipolar Transistors MOSFET 650V 180mOhms@10V 22A N-Ch E-SRS | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 800 V | - | - |
| Id Continuous Drain Current | 17.4 A | - | - |
| Rds On Drain Source Resistance | 235 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 48 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 32 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Series | E | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Fall Time | 76 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 38 ns | - | - |
| Factory Pack Quantity | 20 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 71 ns | - | - |
| Typical Turn On Delay Time | 21 ns | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHW21N80AE-GE3 | MOSFET E Series Power MOSFET | |
| SIHW23N60E-GE3 | MOSFET 600V 158mOhm@10V 23A N-Ch E-SRS | ||
| SIHW22N65E-GE3 | RF Bipolar Transistors MOSFET 650V 180mOhms@10V 22A N-Ch E-SRS | ||
| SIHW23N-60E-GE3 | ブランドニューオリジナル | ||
| SIHW24N65EF-GE3 | ブランドニューオリジナル | ||
Vishay |
SIHW23N60E-GE3 | RF Bipolar Transistors MOSFET 600V 158mOhm@10V 23A N-Ch E-SRS |