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| PartNumber | SIHW70N60EF-GE3 | SIHW73N60E-GE3 |
| Description | MOSFET RECOMMENDED ALT 78-SIHG70N60EF-GE3 | MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247AD-3 |
| Packaging | Reel | Tube |
| Height | 20.82 mm | 20.82 mm |
| Length | 15.87 mm | 15.87 mm |
| Series | EF | E |
| Width | 5.31 mm | 5.31 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 480 | 480 |
| Subcategory | MOSFETs | MOSFETs |
| Unit Weight | 0.229281 oz | 1.340411 oz |
| Number of Channels | - | 1 Channel |
| Transistor Polarity | - | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 600 V |
| Id Continuous Drain Current | - | 73 A |
| Rds On Drain Source Resistance | - | 39 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 4 V |
| Vgs Gate Source Voltage | - | 30 V |
| Qg Gate Charge | - | 241 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 520 W |
| Configuration | - | Single |
| Channel Mode | - | Enhancement |
| Fall Time | - | 120 ns |
| Rise Time | - | 105 ns |
| Typical Turn Off Delay Time | - | 290 ns |
| Typical Turn On Delay Time | - | 63 ns |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHW70N60EF-GE3 | MOSFET RECOMMENDED ALT 78-SIHG70N60EF-GE3 | |
| SIHW73N60E-GE3 | MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS | ||
Vishay |
SIHW73N60E-GE3 | RF Bipolar Transistors MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS | |
| SIHW70N60EF-GE3 | MOSFET N-CH 600V 70A TO-247AD | ||
| SIHW70N60EF | ブランドニューオリジナル |