 | |  | |
| PartNumber | SIR640ADP-T1-GE3 | SIR642DP-T1-GE3 | SIR640DP-T1-GE3 |
| Description | MOSFET 40V Vds 20V Vgs PowerPAK SO-8 | MOSFET RECOMMENDED ALT 781-SIR470DP-T1-GE3 | MOSFET N-CH 40V 60A PPAK SO-8 |
| Manufacturer | Vishay | Vishay | VISHAY |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | E | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 100 A | 60 A | - |
| Rds On Drain Source Resistance | 1.65 mOhms | 1.9 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 900 mV | 1.2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 90 nC | 84 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 104 W | 83 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | - |
| Packaging | Reel | Reel | - |
| Series | SIR | SIR | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 82 S | 70 S | - |
| Fall Time | 8 ns | 9 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 6 ns | 11 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 44 ns | 36 ns | - |
| Typical Turn On Delay Time | 17 ns | 14 ns | - |
| Unit Weight | 0.017870 oz | 0.017870 oz | - |
| Height | - | 1.04 mm | - |
| Length | - | 6.15 mm | - |
| Width | - | 5.15 mm | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIR640ADP-T1-GE3 | MOSFET 40V Vds 20V Vgs PowerPAK SO-8 | |
| SIR642DP-T1-GE3 | MOSFET RECOMMENDED ALT 781-SIR470DP-T1-GE3 | ||
| SIR644DP-T1-GE3 | MOSFET RECOMMENDED ALT 78-SIRA14DP-T1-GE3 | ||
Vishay |
SIR640ADP-T1-GE3 | IGBT Transistors MOSFET 40V 2mOhm@10V 60A N-CH | |
| SIR642DP-T1-GE3 | IGBT Transistors MOSFET 40V 60A 83W 2.4mohms @ 10V | ||
| SIR644DP-T1-GE3 | IGBT Transistors MOSFET 40V 2.7mOhm@60A 60A N-CH | ||
| SIR640DP-T1-GE3 | MOSFET N-CH 40V 60A PPAK SO-8 | ||
| SIR646DP-T1-GE3 | MOSFET N-CH 40V 60A PPAK 8SO | ||
| SIR640ADP | ブランドニューオリジナル | ||
| SIR642DP-T1-E3 | ブランドニューオリジナル | ||
| SIR642DPT1GE3 | Power Field-Effect Transistor, 60A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SIR644DP | ブランドニューオリジナル | ||
| SIR644DP-T1-E3 | ブランドニューオリジナル | ||
| SIR648DP-T1-GE3 | ブランドニューオリジナル |