 | |  | |
| PartNumber | SIR800DP-T1-GE3 | SIR800DP-T1-RE3 | SIR800DP |
| Description | MOSFET 20V Vds 12V Vgs PowerPAK SO-8 | MOSFET 20V Vds 12V Vgs PowerPAK SO-8 | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | E | Y | - |
| Technology | Si | Si | - |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | - |
| Packaging | Reel | Reel | - |
| Series | SIR | SIR | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SIR800DP-GE3 | - | - |
| Unit Weight | 0.017870 oz | 0.017870 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | PowerPAK-SO-8 | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 50 A | - |
| Rds On Drain Source Resistance | - | 1.9 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 600 mV | - |
| Vgs Gate Source Voltage | - | 12 V | - |
| Qg Gate Charge | - | 89 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 69 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Forward Transconductance Min | - | 96 S | - |
| Fall Time | - | 10 ns | - |
| Rise Time | - | 8 ns | - |
| Typical Turn Off Delay Time | - | 54 ns | - |
| Typical Turn On Delay Time | - | 13 ns | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIR800DP-T1-GE3 | MOSFET 20V Vds 12V Vgs PowerPAK SO-8 | |
| SIR800DP-T1-RE3 | MOSFET 20V Vds 12V Vgs PowerPAK SO-8 | ||
| SIR800DP | ブランドニューオリジナル | ||
Vishay |
SIR800DP-T1-GE3 | MOSFET N-CH 20V 50A PPAK SO-8 | |
| SIR800DP-T1-RE3 | MOSFET N-CH 20V 50A POWERPAKSO-8 |